Electronics Weekly15h
110V 4A half-bridge gate driver
Nexperia has introduced a 110V 4A half-bridge gate driver IC. "NGD4300 has been designed for use with dc-dc converters in ...
electronics360.globalspec14h
Renesas jointly developed world-class “8-in-1” proof of concept with Nidec, delivering advanced integration for EV E-Axles
Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, today announced the world's first “8-in-1” ...
powerelectronicsworld14h
Nexperia releases 120V/4A half-bridge gate drivers
Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high ... servers and ...
electrive11h
Mitsubishi Electric introduces high-quality SiC-MOSFET bare die
Mitsubishi Electric is ready to ship samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...
Zacks.com on MSN9h
Can On Semiconductor's Expanding Treo Platform Push the Stock Higher?
The company’s hybrid SiC and IGBT (Insulated-Gate Bipolar Transistor ... solution featuring silicon carbide-based ...
Business Wire22h
Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters
Toshiba's new bare die 1200V SiC MOSFET for automotive traction inverters with a new structure delivers both low ...
Electronics Weekly12h
Electronica – The latest news roundup
Don't miss the Electronics Weekly roundup of all our latest news from Electronica, the bi-annual event running from 12-15 ...